Reduction of contact resistance in pentacene thin-film transistors by direct carrier injection into a-few-molecular-layer channel

被引：72

作者：

Yoneya, N ^{[1
]}

Noda, M ^{[1
]}

Hirai, N ^{[1
]}

Nomoto, K ^{[1
]}

Wada, M ^{[1
]}

Kasahara, J ^{[1
]}

机构：

[1] Sony Corp, Mat Labs, Fus Domain Lab, Ota Ku, Tokyo 1440033, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1814443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found an abrupt reduction of contact resistance, R-c, in pentacene bottom-contact thin-film transistors (TFTs) with Au/Ti source/drain (S/D) electrodes when Ti thickness is below similar to3 nm. Our results suggest that the direct ohmic contact with a few molecular layer channel is a key to reduce the R-c of the S/D electrodes. We propose a Au/self-assembled monolayer electrode structure enabling direct ohmic contact with these few molecular layer channels, and achieved high-performance bottom-contact TFTs with an extrinsic mobility of 1.1 cm(2)/V s, an on/off ratio of 10(6), and a subthreshold swing of 0.3 V/decade. (C) 2004 American Institute of Physics.

引用

页码：4663 / 4665

页数：3

共 16 条

[1] Noncontact potentiometry of polymer field-effect transistors [J].

Bürgi, L ;

Sirringhaus, H ;

Friend, RH .

APPLIED PHYSICS LETTERS, 2002, 80 (16) :2913-2915

[2] Flexible active-matrix displays and shift registers based on solution-processed organic transistors [J].

Gelinck, GH ;

Huitema, HEA ;

Van Veenendaal, E ;

Cantatore, E ;

Schrijnemakers, L ;

Van der Putten, JBPH ;

Geuns, TCT ;

Beenhakkers, M ;

Giesbers, JB ;

Huisman, BH ;

Meijer, EJ ;

Benito, EM ;

Touwslager, FJ ;

Marsman, AW ;

Van Rens, BJE ;

De Leeuw, DM .

NATURE MATERIALS, 2004, 3 (02) :106-110

[3] Field effect conductance measurements on thin crystals of sexithiophene [J].

Granstrom, EL ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (42) :8842-8849

[4] Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes [J].

Gundlach, DJ ;

Jia, LL ;

Jackson, TN .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (12) :571-573

[5]

HAJLAOUI R, 1999, ADV MAT WEINHEIM, V9, P389

[6] Contact resistance in organic thin film transistors [J].

Klauk, H ;

Schmid, G ;

Radlik, W ;

Weber, W ;

Zhou, LS ;

Sheraw, CD ;

Nichols, JA ;

Jackson, TN .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :297-301

[7] High-performance bottom electrode organic thin-film transistors [J].

Kymissis, I ;

Dimitrakopoulos, CD ;

Purushothaman, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1060-1064

[8] Scaling behavior and parasitic series resistance in disordered organic field-effect transistors [J].

Meijer, EJ ;

Gelinck, GH ;

van Veenendaal, E ;

Huisman, BH ;

de Leeuw, DM ;

Klapwijk, TM .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4576-4578

[9] Potential imaging of pentacene organic thin-film transistors [J].

Nichols, JA ;

Gundlach, DJ ;

Jackson, TN .

APPLIED PHYSICS LETTERS, 2003, 83 (12) :2366-2368

[10] Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s [J].

Podzorov, V ;

Sysoev, SE ;

Loginova, E ;

Pudalov, VM ;

Gershenson, ME .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3504-3506

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