Pressure effects on the metal-insulator transition in magnetoresistive manganese perovskites

被引:119
作者
Laukhin, V
Fontcuberta, J
GarciaMunoz, JL
Obradors, X
机构
[1] CSIC,INST CIENCIA MAT BARCELONA,E-08193 BELLATERRA,CATALUNYA,SPAIN
[2] INST PHYS CHEM,CHERNOGOLOVKA,RUSSIA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 16期
关键词
D O I
10.1103/PhysRevB.56.R10009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quasi-hydrostatic-pressure measurements of electrical resistivity up to 11 kbar are presented for a series of manganese perovskites L(2/3)A(1/3)MnO(3). It is found that the Curie temperature T-C, being itself a function of the electronic bandwidth W, displays a larger variation of d ln T-C/dP as the bandwidth is reduced. It is shown that this effect arises primarily from the Mn-O-Mn bond stretching under pressure. However, the observed d ln T-C/dP versus T-C or W variations are found to be significantly larger than expected on the basis of simple steric modifications of bandwidth. We suggest that the electron-phonon coupling is substantially reduced under pressure; this effect is more prominent as the bandwidth is reduced. [S0163-1829(97)51940-0].
引用
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页码:10009 / 10012
页数:4
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