Properties of ambient air aged thin porous silicon

被引:3
作者
Chang, SS [1 ]
Yoon, SO
Choi, GJ
Kawakami, Y
Kurokawa, S
Sakai, A
机构
[1] Kangnung Natl Univ, Dept Ceram Engn, Kangwon Do 210702, Kangnung, South Korea
[2] Korea Inst Sci & Technol, Div Chem Engn, Seoul 130650, South Korea
[3] Kyoto Univ, Fac Engn, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 60601, Japan
[4] Kyoto Univ, Fac Engn, Mesoscop Mat Res Ctr, Sakyo Ku, Kyoto 60601, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词
scanning tunneling microscopy; scanning tunneling spectroscopy; nanostructures; porous silicon; blue luminescence;
D O I
10.1143/JJAP.37.297
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin porous silicon (PS) exhibits the red and blue luminescence bands without any rapid thermal oxidation. In addition, ambient air aged thin PS displays the increase of blue photoluminescence (PL) band with the reduction of the red PL band. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) have been performed both on freshly prepared and ambient air aged anodically etched PS samples. STM studies of these samples reveal the porous structure and displays less than 5 nm feature size for visible luminescing samples. STS analysis of freshly prepared PS shows the expected increase in band-gap energy compared with unetched silicon. The ambient air aged PS which exhibits both red and blue PL reveals an electronic structure similar to that obtained from STS.
引用
收藏
页码:297 / 298
页数:2
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