Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

被引：16

作者：

Kattamis, Alex Z. ^{[1
]}

Cherenack, Kunigunde H.

Hekmatshoar, Bahman

Cheng, I-Chun

Gleskova, Helena

Stunn, James C.

Wagner, Sigurd

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期

关键词：

amorphous-silicon (a-Si : H); electrical stability; flexible substrate; plasma power; silicon nitride gate dielectric; thin-film transistor (TFT);

D O I：

10.1109/LED.2007.900078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm(2) and temperature between 150 degrees C and 300 degrees C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.

引用

页码：606 / 608

页数：3

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