Photoluminescence from silicon nano-particles synthesized by pulsed laser ablation

被引：6

作者：

Narayanan, V

Thareja, RK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India

[2] Indian Inst Technol, Ctr Laser Technol, Kanpur 208016, Uttar Pradesh, India

来源：

MODERN PHYSICS LETTERS B | 2003年 / 17卷 / 03期

关键词：

laser ablation; photoluminescence; nano-particles;

D O I：

10.1142/S0217984903004889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the synthesis and characterization of silicon nanoparticles by ablating silicon wafer in an ambient atmosphere of helium at 1 Torr. The mean cluster size ranging from 1.8 nm to 4.4 nm deposited on silicon substrate at room temperature is observed to depend on the laser fluence. The size of the nanoparticles decreases with laser fluence. Photoluminescence of the deposited films using Nd:YAG laser and Ar+ ion laser at 355 urn and 457.9 nm respectively shows emission-peaks at 1.7, 2.2, and 2.7 eV. The luminescence peak at 2.2 eV and 2.7 eV axe attributed to oxygen related impurities and the peak at 1.7 eV is attributed to quantum confinement.

引用

页码：121 / 129

页数：9

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