The characteristics of surface acoustic waves on AIN/LiNbO3 substrates

被引:17
作者
Kao, KS
Cheng, CC
Chen, YC [1 ]
Lee, YH
机构
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
[2] Lin Inst Technol, Dept Elect Engn, Taipei, Taiwan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 07期
关键词
D O I
10.1007/s00339-002-2022-3
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 degreesC. Based on the structure of IDT/AlN/LiNbO3, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO3 substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO3 substrate. The TCF of a SAW on an AlN/LiNbO3 device was measured to be about -51 ppm/degreesC at h/lambda = 0.1, where h is the thickness of the AlN film and lambda is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO3 substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO3 substrate (-73 ppm/degreesC). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V-p) of the SAW on an AlN/LiNbO3 substrate was significantly increased by the increase of AlN thickness (h/lambda).
引用
收藏
页码:1125 / 1127
页数:3
相关论文
共 18 条
[1]
Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy [J].
Calleja, E ;
SanchezGarcia, MA ;
Monroy, E ;
Sanchez, FJ ;
Munoz, E ;
SanzHervas, A ;
Villar, C ;
Aguilar, M .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4681-4683
[2]
PROTON-EXCHANGED WAVE-GUIDES FOR SURFACE-ACOUSTIC-WAVE ON Z-CUT LINBO3 USING OCTANOIC-ACID [J].
CHENG, CC ;
CHEN, YC ;
WANG, ST ;
TSAI, BW .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10) :5732-5735
[3]
Morphology and structure of aluminum nitride thin films on glass substrates [J].
Cheng, CC ;
Chen, YC ;
Wang, HJ ;
Chen, WR .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03) :1880-1885
[4]
Growth of c-axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering [J].
Cheng, CC ;
Chen, YC ;
Horng, RC ;
Wang, HJ ;
Chen, WR ;
Lai, EK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06) :3335-3340
[5]
Thermally oxidized AlN thin films for device insulators [J].
Chowdhury, EA ;
Kolodzey, J ;
Olowolafe, JO ;
Qiu, G ;
Katulka, G ;
Hits, D ;
Dashiell, M ;
vanderWeide, D ;
Swann, CP ;
Unruh, KM .
APPLIED PHYSICS LETTERS, 1997, 70 (20) :2732-2734
[6]
Characteristics of stacking faults in AlN thin films [J].
Dovidenko, K ;
Oktyabrsky, S ;
Narayan, J .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4296-4299
[7]
GIANNELLI K, 1996, IEEE ULTRASONICS S P, V1, P289
[8]
Synthesis and surface acoustic wave properties of AlN thin films fabricated on (001) and (110) sapphire substrates using chemical vapor deposition of AlCl3-NH3 system [J].
Kaya, K ;
Takahashi, K ;
Shibata, Y ;
Kanno, Y ;
Hirai, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (5A) :2837-2842
[9]
LAKIN KM, 2000, IEEE ULTRASONICS S P, V1, P855
[10]
LAKIN KM, 1974, IEEE ULTRASONICS S P, V1, P302