Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes

We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p(+)-i-n(+) GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 mu m, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices. (C) 1998 American Institute of Physics.