Observation of deep levels in SiC by optical-isothermal capacitance transient spectroscopy

被引：1

作者：

Kobayashi, S ^{[1
]}

Imai, S ^{[1
]}

Hayami, Y ^{[1
]}

Kushibe, M ^{[1
]}

Shinohe, T ^{[1
]}

Okushi, H ^{[1
]}

机构：

[1] UPR Ultra Low Loss Power Device Technol Res Body, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

4H-SiC; 6H-SiC; deep levels; isothermal capacitance transient spectroscopy;

D O I：

10.4028/www.scientific.net/MSF.338-342.757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep levels in bulk crystals of 6H- and 4H-SiC, and epilayers of 4H-SiC were studied using optical-isothermal transient spectroscopy (O-ICTS) and conventional dark ICTS methods, for the first time. For 6H-SiC bulk, E1 with 3x 10(15) cm(-3) (E-c- 0.32 eV), E2 with 5x 10(14) cm(-3) (E-c - 0.49 eV) and E3 with 7x 10(14)cm(-3) (E-c- 0.50 eV) were observed by dark ICTS. Further, E4 with 1x 10(15) cm(-3), which was located between below E3 and above E-c - 1.96 eV, was observed by O-ICTS. On the other hand, for 4H-SiC bulk, one dominant deep level (E5 with 1x 10(15) cm(-3) located at E-c - 1.15 eV) and one minor lever (E6 with 3 x 10(14) cm(-3) located at deeper than E5) were observed by both dark- and O- ICTS. However, for 4H-SiC epilayer, no significant levels were observed either by dark- or O-ICTS, which is consistent with the case of 6H-SiC epilayer reported previously.

引用

页码：757 / 760

页数：4

共 8 条

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[2]

2-0

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