DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS

被引：13

作者：

JANG, S ^{[1
]}

KIMOTO, T ^{[1
]}

MATSUNAMI, H ^{[1
]}

机构：

[1] KYOTO UNIV, DEPT ELECT ENGN, SAKYO KU, KYOTO 60601, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated deep levels in 6H-SiC wafers grown by a modified Lely method and step-controlled epitaxial layers by transient capacitance methods. Several deep electron traps, Of which concentrations were on the order of 10(15) CM-3, located at 0.39-0.69 eV below the conduction band edge were observed in the 6H-SiC wafers. However, the epitaxial layers by step-controlled epitaxy had very few traps of which concentrations were below the detection limit (< 10(13) Cm-3).

引用

页码：581 / 583

页数：3

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