DEFECTS IN NEUTRON-IRRADIATED SIC

被引：58

作者：

NAGESH, V ^{[1
]}

FARMER, JW ^{[1
]}

DAVIS, RF ^{[1
]}

KONG, HS ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1138 / 1140

页数：3

共 10 条

[1] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].

ADDAMIANO, A ;

KLEIN, PH .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294

[2]

Aukerman L. W., 1959, SILICON CARBIDE, P388

[3]

BABCOCK R, 1965, IEEE T NUCL SCH, V1243, P388

[4] THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J].

LIAW, HP ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :3014-3018

[5]

LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[6]

MEESE JM, AFWALTR804137 AIR FO, P228

[7]

MITCHELL EWJ, 1965, RAD DAMAGE SEMICONDU, P235

[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[9] HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

SASAKI, K ;

SAKUMA, E ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :72-73

[10]

ZHOU P, UNPUB APPL PHYS LETT

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