Scanning-tunneling-microscopy based thermochemical hole burning on a new charge-transfer complex and its potential for data storage

被引：32

作者：

Peng, HL ^{[1
]}

Ran, CB ^{[1
]}

Yu, XC ^{[1
]}

Zhang, R ^{[1
]}

Liu, ZF ^{[1
]}

机构：

[1] Peking Univ, Coll Chem & Mol Engn, CNST, Beijing 100871, Peoples R China

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 04期

关键词：

D O I：

10.1002/adma.200401148

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultrahigh-density data storage is realized using a thermochemical hole-burning technique based on scanning tunneling microscopy (STM). The heating effect induced by the STM current gives rise to localized thermochemical decomposition of an organic charge-transfer complex substrate and subsequent gasification of its low-boiling-point decomposition products. A large array of nanometer-sized holes is recorded on the substrate (see Figure).

引用

页码：459 / +

页数：7

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