Transition from layer-by-layer to rapid roughening in the growth of DIP on SiO2

被引：48

作者：

Zhang, X. N.

Barrena, E.

de Oteyza, D. G.

Dosch, H.

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Theoret & Angew Phys, D-70550 Stuttgart, Germany

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 12期

关键词：

organic; in situ growth; strain; X-ray diffraction; structure;

D O I：

10.1016/j.susc.2007.04.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Combining atomic force microscopy (AFM) and in situ grazing incidence X-ray diffraction (GIXD) we study the morphology and inplane structure of diindenoperylene (DIP) on SiO2 in the early stages of the growth. We unravel noticeable strain relaxation phenomena in the in-plane structure during the growth of the first layers, concomitant with a transition from layer-by-layer growth to rapid roughening at a certain critical thickness of about five monolayers. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：2420 / 2425

页数：6

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