Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions

被引：10

作者：

Chong, YF

Pey, KL

Lu, YF

Wee, ATS

Osipowicz, T

Seng, HL

See, A

Dai, JY

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[3] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1323549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p(+)/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm(2). These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing. (C) 2000 American Institute of Physics. [S0003-6951(00)01345-0].

引用

页码：2994 / 2996

页数：3

共 12 条

[1] Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials [J].