n+/p ultra-shallow junction formation with plasma immersion ion implantation

被引：15

作者：

Yang, BL ^{[1
]}

Jones, EC

Cheung, NW

Shao, JQ

Wong, H

Cheng, YC

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Eaton Corp, Semicond Equipment Operat, Beverly, MA 01915 USA

[3] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong

[4] Univ Hong Kong, Hong Kong, Hong Kong

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 09期

关键词：

D O I：

10.1016/S0026-2714(98)00037-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

n(+) /p ultra-shallow junctions formed by PH3 plasma immersion ion implantation (PIII) have been studied and diodes with good electrical characteristics have been obtained. The influence of annealing conditions and carrier gas on junction depth and sheet resistance have been studied. It is found that a higher content of H and/or He in silicon can slow down the diffusion of phosphorus and the activation ability of implanted dopant ions in silicon; a shallower junction can been obtained with He rather than Hz as the carrier gas; and the influence of annealing at 850 degrees C for 20 s on sheet resistance is opposite to that of annealing at 900 degrees C for 6 s on sheet resistance. In addition, mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1489 / 1494

页数：6

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