SUB-100 NM P+/N JUNCTION FORMATION USING PLASMA IMMERSION ION-IMPLANTATION

被引：40

作者：

QIAN, XY

CHEUNG, NW

LIEBERMAN, MA

CURRENT, MI

CHU, PK

HARRINGTON, WL

MAGEE, CW

BOTNICK, EM

机构：

[1] APPL MAT INC,DIV IMPLANT,SANTA CLARA,CA 95054

[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

[3] EVANS E INC,PLAINSBORO,NJ 08536

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96286-T

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using plasma immersion ion implantation (PIII), sub-100 nm p+/n junctions were fabricated with SiF4 preamorphization followed by BF3 doping. With this technique, the dose rate can be as high as 10(16)/cm2 per second. The silicon wafer was immersed in SiF4 or BF3 plasma and biased with a negative voltage. The positively charged ions were accelerated by the electric field in the plasma sheath and implanted into the wafer. The junction depth can be controlled by varying the negative voltage applied to the wafer holder and thermal annealing conditions.

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页码：821 / 825

页数：5

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