FORMATION OF ULTRASHALLOW P+-N JUNCTIONS BY LOW-ENERGY BORON IMPLANTATION USING A MODIFIED ION IMPLANTER

被引：25

作者：

HONG, SN

RUGGLES, GA

PAULOS, JJ

WORTMAN, JJ

OZTURK, MC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 18期

关键词：

D O I：

10.1063/1.100470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1741 / 1743

页数：3

共 11 条

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[10] VERY SHALLOW P+-N JUNCTION FORMATION BY LOW-ENERGY BF2+ ION-IMPLANTATION INTO CRYSTALLINE AND GERMANIUM PREAMORPHIZED SILICON [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (12) :963-965

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