VERY SHALLOW P+-N JUNCTION FORMATION BY LOW-ENERGY BF2+ ION-IMPLANTATION INTO CRYSTALLINE AND GERMANIUM PREAMORPHIZED SILICON

被引：25

作者：

OZTURK, MC ^{[1
]}

WORTMAN, JJ ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：963 / 965

页数：3

共 11 条

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