RETARDED AND ENHANCED DOPANT DIFFUSION IN SILICON RELATED TO IMPLANTATION-INDUCED EXCESS VACANCIES AND INTERSTITIALS

被引：91

作者：

SERVIDORI, M ^{[1
]}

ANGELUCCI, R ^{[1
]}

CEMBALI, F ^{[1
]}

NEGRINI, P ^{[1
]}

SOLMI, S ^{[1
]}

ZAUMSEIL, P ^{[1
]}

WINTER, U ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS KORSING,DDR-1200 FRANKFURT,GER DEM REP

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1834 / 1840

页数：7

共 37 条

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