SOLID-II - HIGH-VOLTAGE HIGH-GAIN KILO-ANGSTROM-CHANNEL-LENGTH CMOSFETS USING SILICIDE WITH SELF-ALIGNED ULTRASHALLOW (3S) JUNCTION

被引：19

作者：

HORIUCHI, M

YAMAGUCHI, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 02期

关键词：

D O I：

10.1109/T-ED.1986.22476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：260 / 269

页数：10

相关论文

共 30 条

[1] GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN
BACCARANI, G
WORDEMAN, MR
DENNARD, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 452 - 462
[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY
BERGER, HH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &
[3] MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
[4] TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM
BERTI, M
DRIGO, AV
COHEN, C
SIEJKA, J
BENTINI, GG
NIPOTI, R
GUERRI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3558 - 3565
[5] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS
BEYERS, R
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) : 147 - 152
[6] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE
BOTHA, AP
PRETORIUS, R
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 127 - 133
[7] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
BOWER, RW
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &
[8] Brice D.K., 1975, ION IMPLANTATION RAN
[9] CONTACT RESISTANCE IN DIFFUSED RESISTORS
CHANG, IF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 368 - &
[10] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295