A PLASMA IMMERSION ION-IMPLANTATION REACTOR FOR ULSI FABRICATION

被引：22

作者：

QIAN, XY

CARL, D

BENASSO, J

CHEUNG, NW

LIEBERMAN, MA

BROWN, IG

GALVIN, JE

MACGILL, RA

CURRENT, MI

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] APPL MAT INC,DIV IMPLANT,SANTA CLARA,CA 95054

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96300-A

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A plasma immersion ion implantation (PIII) reactor compatible with integrated-circuit fabrication has been developed. Using this system, metallic impurity gettering with a noble gas plasma, sub-100-nm p+/n junction formation with SiF4 plasma for preamorphization and BF3 plasma for doping, trench conformal p+ doping, and Pd ion seeding implantation for selective Cu electroless plating were successfully carried out. The PIII system consists of an electron cyclotron resonance plasma source, a processing chamber with wafer bias supply, a sputtering target with bias supply, gas handling and plasma diagnostic tools. The apparatus is described in this paper. Plasma characterization and reactor performance are also presented.

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页码：884 / 887

页数：4

相关论文

共 10 条

[1] OXIDATION OF SILICON IN AN ELECTRON-CYCLOTRON RESONANCE OXYGEN PLASMA - KINETICS, PHYSICOCHEMICAL, AND ELECTRICAL-PROPERTIES [J].

CARL, DA ;

HESS, DW ;

LIEBERMAN, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2924-2930

[2] PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].

CONRAD, JR ;

RADTKE, JL ;

DODD, RA ;

WORZALA, FJ ;

TRAN, NC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596

[3] PLASMA CHARACTERIZATION FOR A DIVERGENT FIELD ELECTRON-CYCLOTRON RESONANCE SOURCE [J].

FORSTER, J ;

HOLBER, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :899-902

[4]

Laframboise J. G., 1966, 100 U TOR I AER STUD

[5] CONFORMAL IMPLANTATION FOR TRENCH DOPING WITH PLASMA IMMERSION ION-IMPLANTATION [J].

QIAN, XY ;

CHEUNG, NW ;

LIEBERMAN, MA ;

BRENNAN, R ;

CURRENT, MI ;

JHA, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :898-901

[6] SUB-100 NM P+/N JUNCTION FORMATION USING PLASMA IMMERSION ION-IMPLANTATION [J].

QIAN, XY ;

CHEUNG, NW ;

LIEBERMAN, MA ;

CURRENT, MI ;

CHU, PK ;

HARRINGTON, WL ;

MAGEE, CW ;

BOTNICK, EM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :821-825

[7] PLASMA IMMERSION PD ION-IMPLANTATION SEEDING PATTERN-FORMATION FOR SELECTIVE ELECTROLESS CU PLATING [J].

QIAN, XY ;

KIANG, MH ;

HUANG, J ;

CARL, D ;

CHEUNG, NW ;

LIEBERMAN, MA ;

BROWN, IG ;

YU, KM ;

CURRENT, MI .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :888-892

[8]

QIAN XY, 1990, P S ION IMPLANTATION, V90, P268

[9] PLASMA IMMERSION ION-IMPLANTATION USING PLASMAS GENERATED BY RADIO-FREQUENCY TECHNIQUES [J].

TENDYS, J ;

DONNELLY, IJ ;

KENNY, MJ ;

POLLOCK, JTA .

APPLIED PHYSICS LETTERS, 1988, 53 (22) :2143-2145

[10] PLASMA IMMERSION ION-IMPLANTATION FOR IMPURITY GETTERING IN SILICON [J].

WONG, H ;

QIAN, XY ;

CARL, D ;

CHEUNG, NW ;

LIEBERMAN, MA ;

BROWN, IG ;

YU, KM .

ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 :91-96