SUB-100-NM P+-N SHALLOW JUNCTIONS FABRICATED BY GROUP-III DUAL ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：10

作者：

LIN, CM

STECKL, AJ

CHOW, TP

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,CINCINNATI,OH 45221

[2] INTEL CORP,SANTA CLARA,CA 95052

[3] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1790 / 1792

页数：3

共 9 条

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JONES KS, 1988, P MAT RES SOC, V100, P277

[4]

KASAI N, 1987, IEDM TECH DIG, P367

[5] ELECTRICAL-PROPERTIES OF GA-IMPLANTED SI P+-N SHALLOW JUNCTIONS FABRICATED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING [J].

LIN, CM ;

STECKL, AJ ;

CHOW, TP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :594-597

[6] SI P+-N SHALLOW JUNCTION FABRICATION USING ON-AXIS GA+ IMPLANTATION [J].

LIN, CM ;

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APPLIED PHYSICS LETTERS, 1988, 52 (24) :2049-2051

[7] VERY SHALLOW P+-N JUNCTION FORMATION BY LOW-ENERGY BF2+ ION-IMPLANTATION INTO CRYSTALLINE AND GERMANIUM PREAMORPHIZED SILICON [J].

OZTURK, MC ;

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FAIR, RB .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :963-965

[8]

PFIESTER JR, 1987, IEDM, P51

[9] DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON [J].

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ANDERSON, CH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6336-6339

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