ELECTRICAL-PROPERTIES OF GA-IMPLANTED SI P+-N SHALLOW JUNCTIONS FABRICATED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING

被引：6

作者：

LIN, CM

STECKL, AJ

CHOW, TP

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST,TROY,NY 12180

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：594 / 597

页数：4

共 11 条

[1] DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON [J].

BROTHERTON, SD ;

GOWERS, JP ;

YOUNG, ND ;

CLEGG, JB ;

AYRES, JR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3567-3575

[2] 1-2-KEV BORON IMPLANTS INTO SILICON [J].

DAVIES, DE .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :397-399

[3] HIGHLY ACTIVATED SHALLOW GA PROFILES IN SILICON OBTAINED BY IMPLANTATION AND RAPID THERMAL ANNEALING [J].

HARRISON, HB ;

IYER, SS ;

SAIHALASZ, GA ;

COHEN, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :992-994

[4] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONS [J].

LASKY, JB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :6009-6018

[5] SI P+-N SHALLOW JUNCTION FABRICATION USING ON-AXIS GA+ IMPLANTATION [J].

LIN, CM ;

STECKL, AJ ;

CHOW, TP .

APPLIED PHYSICS LETTERS, 1988, 52 (24) :2049-2051

[6] ABNORMAL SOLID-SOLUTION AND ACTIVATION BEHAVIOR IN GA-IMPLANTED SI(100) [J].

MATSUO, J ;

KATO, I ;

HORIE, H ;

NAKAYAMA, N ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2037-2039

[7] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J].

MICHEL, AE ;

KASTL, RH ;

MADER, SR ;

MASTERS, BJ ;

GARDNER, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :404-406

[8] DEVICE-GRADE ULTRA-SHALLOW JUNCTIONS FABRICATED WITH ANTIMONY [J].

SAIHALASZ, GA ;

HARRISON, HB .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :534-536

[9] DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

KERN, DP ;

GANIN, E ;

RISHTON, S ;

ZICHERMAN, DS ;

SCHMID, H ;

POLCARI, MR ;

NG, HY ;

RESTLE, PJ ;

CHANG, THP ;

DENNARD, RH .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :463-466

[10] GALLIUM DISTRIBUTION AND ELECTRICAL ACTIVATION IN GA+-IMPLANTED SI [J].

TSAI, MY ;

STREETMAN, BG ;

DELINE, VR ;

EVANS, CA .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) :111-126

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