ABNORMAL SOLID-SOLUTION AND ACTIVATION BEHAVIOR IN GA-IMPLANTED SI(100)

被引：10

作者：

MATSUO, J

KATO, I

HORIE, H

NAKAYAMA, N

ISHIKAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2037 / 2039

页数：3

共 14 条

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[3]

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[5] JUNCTION DEPTH VERSUS SHEET RESISTIVITY IN BF-2+-IMPLANTED RAPID-THERMAL-ANNEALED SILICON [J].

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[6]

Morgan D V, 1973, CHANNELING

[7] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

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[8]

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[9] Formation of stable dopant interstitials during ion implantation of silicon [J].

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[10] TRANSMISSION ELECTRON-MICROSCOPY OF ALUMINUM IMPLANTED AND ANNEALED (100) SI - DIRECT EVIDENCE OF ALUMINUM PRECIPITATE FORMATION [J].

SADANA, DK ;

NORCOTT, MH ;

WILSON, RG ;

DAHMEN, U .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1169-1171

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