JUNCTION DEPTH VERSUS SHEET RESISTIVITY IN BF-2+-IMPLANTED RAPID-THERMAL-ANNEALED SILICON

被引：9

作者：

MIKOSHIBA, H

ABIKO, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期

关键词：

D O I：

10.1109/EDL.1986.26340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：190 / 192

页数：3

共 15 条

[1] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[2] SHALLOW BORON-DOPED JUNCTIONS IN SILICON [J].

COHEN, SS ;

NORTON, JF ;

KOCH, EF ;

WEISEL, GJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1200-1213

[3]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[4]

KOSHIMARU S, 1981 S VLSI, P18

[5] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J].

MASETTI, G ;

SEVERI, M ;

SOLMI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :764-769

[6]

MULLER H, 1972, J APPL PHYS, V43, P2006

[7] RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

CHRISTIE, WH ;

WORTMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2709-2716

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[9] ELECTRICAL-PROPERTIES OF IMPLANTED AND RAPID THERMAL ANNEALED SHALLOW P+-N JUNCTIONS [J].

OZGUZ, VH ;

WORTMAN, JJ ;

HAUSER, JR ;

SIMPSON, L ;

LITTLEJOHN, MA ;

CHU, WK ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1225-1226

[10] HIGH-CONCENTRATION EFFECTS OF ION-IMPLANTED BORON IN SILICON [J].

RYSSEL, H ;

MULLER, K ;

HABERGER, K ;

HENKELMANN, R ;

JAHNEL, F .

APPLIED PHYSICS, 1980, 22 (01) :35-38

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