SI P+-N SHALLOW JUNCTION FABRICATION USING ON-AXIS GA+ IMPLANTATION

被引：10

作者：

LIN, CM

STECKL, AJ

CHOW, TP

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期

关键词：

D O I：

10.1063/1.99577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2049 / 2051

页数：3

共 8 条

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AYRES, JR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3567-3575

[2] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

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LIU, J ;

WORTMAN, J .

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[3] ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS [J].

CHAN, TY ;

WU, AT ;

KO, PK ;

HU, CM ;

RAZOUK, RR .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :16-19

[4] HIGHLY ACTIVATED SHALLOW GA PROFILES IN SILICON OBTAINED BY IMPLANTATION AND RAPID THERMAL ANNEALING [J].

HARRISON, HB ;

IYER, SS ;

SAIHALASZ, GA ;

COHEN, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :992-994

[5]

LIN CM, IN PRESS J VAC SCI T

[6] ABNORMAL SOLID-SOLUTION AND ACTIVATION BEHAVIOR IN GA-IMPLANTED SI(100) [J].

MATSUO, J ;

KATO, I ;

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ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2037-2039

[7]

PFIESTER JR, 1987, IEDM, P51

[8]

WU JW, 1986, J APPL PHYS, V60, P2422

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