CHARACTERISTICS OF SUB-100-NM P+/N JUNCTIONS FABRICATED BY PLASMA IMMERSION ION-IMPLANTATION

被引：42

作者：

JONES, EC

CHEUNG, NW

机构：

[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.244712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma immersion ion implantation (PIII) is an efficient method for fabricating high-quality p+/n diodes with junction depths below 100 nm. SiF4 is implanted to create an amorphous Si layer to retard B channeling and diffusion, and then BF3 is implanted. Ultrashallow p+/n junctions are formed by annealing at 1060-degrees-C for 10 s. With the shallow implants, no extended defects are observed in device or peripheral areas due to rapid outdiffusion of fluorine. Diode electrical characteristics yield forward ideality factor of 1.05-1.06 and leakage current density below 2 nA/cm2 in the diode bulk. Minority-carrier lifetime below the junction is greater than 250 mus.

引用

页码：444 / 446

页数：3

共 9 条

[1] PLASMA IMMERSION ION-IMPLANTATION FOR ULSI PROCESSING [J].