SILICON PREAMORPHIZATION AND SHALLOW JUNCTION FORMATION FOR ULSI CIRCUITS

被引：23

作者：

WU, CP

MCGINN, JT

HEWITT, LR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 06期

关键词：

D O I：

10.1007/BF02657525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：721 / 730

页数：10

共 23 条

[1] COMPARISON OF ELECTRICAL DEFECTS IN GE+ AND SI+ PREAMORPHIZED BF2-IMPLANTED SILICON [J].

AYRES, JR ;

BROTHERTON, SD ;

CLEGG, JB ;

GILL, A .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3628-3632

[2] DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON [J].

BROTHERTON, SD ;

GOWERS, JP ;

YOUNG, ND ;

CLEGG, JB ;

AYRES, JR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3567-3575

[3]

BROTHERTON SD, 1988, J ELECTRON MATER, V18, P173

[4] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J].

CEMBALI, F ;

SERVIDORI, M ;

LANDI, E ;

SOLMI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :315-319

[5] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI [J].

CHO, K ;

ALLEN, WR ;

FINSTAD, TG ;

CHU, WK ;

LIU, J ;

WORTMAN, JJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :265-272

[6]

Chu W. K., 1978, BACKSCATTERING SPECT

[7] SHALLOW BORON-DOPED JUNCTIONS IN SILICON [J].

COHEN, SS ;

NORTON, JF ;

KOCH, EF ;

WEISEL, GJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1200-1213

[8] ENHANCED DIFFUSION PHENOMENA DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED BORON-IMPLANTED SILICON [J].

GUIMARAES, S ;

LANDI, E ;

SOLMI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (02) :589-598

[9] BORON IMPLANTATIONS IN SILICON - COMPARISON OF CHARGE CARRIER AND BORON CONCENTRATION PROFILES [J].

HOFKER, WK ;

WERNER, HW ;

OOSTHOEK, DP ;

KOEMAN, NJ .

APPLIED PHYSICS, 1974, 4 (02) :125-133

[10] JUNCTION LEAKAGE STUDIES IN RAPID THERMAL ANNEALED DIODES [J].

KAMGAR, A ;

FICHTNER, W ;

SHENG, TT ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :754-756

← 1 2 3 →