JUNCTION LEAKAGE STUDIES IN RAPID THERMAL ANNEALED DIODES

被引：17

作者：

KAMGAR, A

FICHTNER, W

SHENG, TT

JACOBSON, DC

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：754 / 756

页数：3

共 10 条

[1] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

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WEST, KW .

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[2]

Hodgson R. T., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P355

[3]

Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7

[4] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONS [J].

LASKY, JB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :6009-6018

[5] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J].

LUE, JT .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :73-76

[6] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J].

MASETTI, G ;

SEVERI, M ;

SOLMI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :764-769

[7] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

EBY, RE ;

WORTMAN, JJ ;

OZGUZ, V ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :957-959

[8]

NARAYAN J, 1983, LASER SOLID INTERACT

[9] ANNEALING OF IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

FULKS, RT ;

KAMINS, TI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :33-36

[10]

SEDGWICK TO, 1983, J ELECTROCHEM SOC, V130, P848

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