ANNEALING OF IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES USING AN INCOHERENT-LIGHT SOURCE

被引：8

作者：

POWELL, RA

FULKS, RT

KAMINS, TI

机构：

[1] EXTRION DIV,GLOUCESTER,MA 01930

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 01期

关键词：

D O I：

10.1116/1.571305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：33 / 36

页数：4

共 17 条

[1] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J].

BOMKE, HA ;

BERKOWITZ, HL ;

HARMATZ, M ;

KRONENBERG, S ;

LUX, R .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :955-957

[2] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

COHEN, RL ;

WILLIAMS, JS ;

FELDMAN, LC ;

WEST, KW .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :751-753

[3] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

CORRERA, L ;

PEDULLI, L .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :55-57

[4]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[5]

FERRIS SD, 1979, AIP C P, V40

[6] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

[7]

GIBBONS JF, 1981, LASER ELECTRON BEAM, P449

[8]

Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[9] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J].

KAMINS, TI ;

ROSE, PH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1308-1311

[10] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J].

LAU, SS ;

ALLMEN, MV ;

GOLECKI, I ;

NICOLET, MA ;

KENNEDY, EF ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :327-329

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