COMPARISON OF ELECTRICAL DEFECTS IN GE+ AND SI+ PREAMORPHIZED BF2-IMPLANTED SILICON

被引：24

作者：

AYRES, JR

BROTHERTON, SD

CLEGG, JB

GILL, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3628 / 3632

页数：5

共 9 条

[1] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J].

BROTHERTON, SD .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :987-990

[2] DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON [J].

BROTHERTON, SD ;

GOWERS, JP ;

YOUNG, ND ;

CLEGG, JB ;

AYRES, JR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3567-3575

[3] THE OBSERVATION OF DEEP DONOR LEVELS IN EPITAXIALLY REGROWN IMPLANTED SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

GILL, A .

PHYSICA B & C, 1985, 129 (1-3) :166-170

[4] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J].

CEMBALI, F ;

SERVIDORI, M ;

LANDI, E ;

SOLMI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :315-319

[5]

MASZARA W, 1985, MATER RES SOC S P, V35, P277

[6]

Sadana D. K., 1985, Microscopy of Semiconducting Materials, 1985. Proceedings of the Royal Microscopical Society Conference, P93

[7]

SHANNON JM, 1985, 1ST P INT S SI MBE, P242

[8]

SHANNON JM, 1984, I PHYS C SER, V69, P45

[9]

THORNTON J, COMMUNICATION

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