ELECTRONIC DEFECTS IN SILICON INDUCED BY MEV CARBON AND OXYGEN IMPLANTATIONS

被引：16

作者：

WONG, H

CHEUNG, NW

WONG, SS

机构：

[1] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90336-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：970 / 974

页数：5

共 9 条

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BYRNE, PF ;

CHEUNG, NW ;

SADANA, DK .

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[2]

BYRNE PF, 1984, THESIS U CALIFORNIA

[3]

CHEUNG NW, 1985, P SOC PHOTO-OPT INST, V530, P2, DOI 10.1117/12.946460

[4]

Combs S. R., 1981, International Electron Devices Meeting, P346

[5]

Muller RS, 1986, DEVICE ELECT INTEGRA, P242

[6] MINORITY-CARRIER LIFETIME ANALYSIS OF SILICON EPITAXY AND BULK CRYSTALS WITH NONUNIFORMLY DISTRIBUTED DEFECTS [J].

RADZIMSKI, Z ;

HONEYCUTT, J ;

ROZGONYI, GA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :80-84

[7] MEV-ENERGY B+, P+ AND AS+ ION-IMPLANTATION INTO SI [J].

TAMURA, M ;

NATSUAKI, N ;

WADA, Y ;

MITANI, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :438-446

[8] PROXIMITY GETTERING WITH MEGA-ELECTRON-VOLT CARBON AND OXYGEN IMPLANTATIONS [J].

WONG, H ;

CHEUNG, NW ;

CHU, PK ;

LIU, J ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1988, 52 (12) :1023-1025

[9]

Ziegler J.F., 1985, STOPPING RANGE IONS

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