Plasma doping for silicon

被引：16

作者：

Mizuno, B

Nakayama, I

Takase, M

Nakaoka, H

Kubota, M

机构：

[1] Semiconductor Research Center, Matsushita Elec. Indust. Co., L., Moriguchi, Osaka, 3-1-1, Yagumo-nakamachi

来源：

SURFACE & COATINGS TECHNOLOGY | 1996年 / 85卷 / 1-2期

关键词：

plasma; doping; transistor; diode; trench;

D O I：

10.1016/0257-8972(96)02881-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Very shallow and dense doping was realized by using the plasma doping method. This method was applied to fabricate diodes and MOS transistors with photo-resist as a mask material. This method is likely to be an alternative to ion implantation due to its properties of low energy and high throughput. The brief history of plasma doping is also reviewed.

引用

页码：51 / 55

页数：5

共 12 条

[1]

FELCH S, 1993, NUCL INSTRM METH P B, V74, P687

[2]

Gibbons J.F., 1975, PROJECTED RANGE STAT, V2nd

[3] CHARACTERISTICS OF SUB-100-NM P+/N JUNCTIONS FABRICATED BY PLASMA IMMERSION ION-IMPLANTATION [J].