Modeling of the depletion of the amorphous-silicon surface during hemispherical grained silicon formation

被引：23

作者：

Sallese, JM ^{[1
]}

Ils, A

Bouvet, D

Fazan, P

Merritt, C

机构：

[1] Swiss Fed Inst Technol, Elect Lab, CH-1015 Lausanne, Switzerland

[2] ASM Int, Bilthoven, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.1321024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model, based on surface energy minimization under nonequilibrium conditions, is presented to describe the evolution of the amorphous silicon (a-Si) topography near the hemispherical grained silicon. The evolution of the depletion area can be explained by a combination between capture of silicon (Si) atoms at the grain boundary and energy minimization of the surrounding a-Si surface. Grain depletion dependence on annealing time was measured by means of transmission electron microscopy. The simulated results agree well with the real observations. This approach is presented as a first step in physically based modeling of HSG formation. (C) 2000 American Institute of Physics. [S0021-8979(00)06323-4].

引用

页码：5751 / 5755

页数：5

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