Design of a low power SnO2 gas sensor integrated on silicon oxynitride membrane

被引:32
作者
Astié, S
Gué, AM
Scheid, E
Guillemet, JP
机构
[1] MOTOROLA SA, F-31023 Toulouse, France
[2] CNRS, LAAS, F-31077 Toulouse 4, France
关键词
finite element method; SnO2; electro-thermal;
D O I
10.1016/S0925-4005(00)00403-2
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Power consumption is one of the major challenges for SnO2 gas sensors. We propose a new solution using a silicon oxynitride membrane (SiOxNy), allowing a low power consumption (65 mW) at the operating temperature (450 degrees C). Using electro-thermal simulation by finite element method (SESES(TM)), a new design was determined with optimized size of heater and membrane area. The corresponding gas sensors were fabricated and their mechanical strength and thermal performances were correlated with FEM electro-thermal simulations. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:84 / 88
页数:5
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