Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE

被引：7

作者：

Hey, R. ^{[1
]}

Trampert, A. ^{[1
]}

Jahn, U. ^{[1
]}

Couto, O. D. D., Jr. ^{[1
]}

Santos, P. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

low-dimensional structures; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.11.291

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structural and optical properties of (In,Ga)As/(AI,Ga)As quantum wells grown on GaAs(I 10) by conventional molecular beam epitaxy as well as by migration-enhanced epitaxy are studied by low-temperature photoluminescence (PL), cathodoluminescence (CL), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The quality of GaAs/(Al,Ga)As quantum wells (QWs) allows to detect spin transport mediated by surface acoustic waves over distances up to 65 mu m with spin lifetimes of about 22 ns. For (In,Ga)As/GaAs QWs, the accumulated strain due to the increase of the In mole fractions or the well thicknesses degrades the structural perfection more dramatically in structures with (1 1 0)-orientation than in structures with (0 0 1)-orientation. The quality of (In,Ga)As wells is remarkably improved by migration-enhanced epitaxy. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：158 / 162

页数：5

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