Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon-germanium alloys

被引:108
作者
Scott, Shelley A. [1 ]
Lagally, Max G. [1 ]
机构
[1] Univ Wisconsin, Madison, WI 53706 USA
关键词
D O I
10.1088/0022-3727/40/4/R01
中图分类号
O59 [应用物理学];
学科分类号
摘要
The emerging field of strained-Si based nanomembranes is reviewed, including fabrication techniques, strain-induced band structure engineering, electronic applications and three-dimensional membrane architectures. Elastic strain sharing between thin heteroepitaxial Si and SiGe films, enabled by techniques that allow release of these films from a handling substrate, creates a new material: freestanding, single-crystal, strained nanomembranes. These flexible nanomembranes are virtually dislocation-free and have many potential new applications. Strain engineering also provides opportunities for massively parallel self-assembly of a wide variety of three-dimensional nanostructures.
引用
收藏
页码:R75 / R92
页数:18
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