Assembly of one-dimensional nanorods into Bi2S3 films with enhanced thermoelectric transport properties

被引：108

作者：

Liufu, Sheng-Cong ^{[1
]}

Chen, Li-Dong ^{[1
]}

Yao, Qin ^{[1
]}

Wang, Chun-Fen ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

D O I：

10.1063/1.2712504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth sulfide thin films have been assembled by cross-linkage nanorods on surface-functionalized Si substrate with self-assembled monolayers. Results of transmission electron microscopy and electron diffraction revealed that highly crystalline Bi2S3 nanorods grow along c-axis direction. Electrical transport properties including resistivity (0.02 Omega cm), thermopower (-755 mu V K-1), and carrier mobilities (1100 cm(2) V-1 s(-1)) of the Bi2S3 films at 300 K are found superior to those of previously reported Bi2S3 samples. The Bi2S3 films exhibit a maximum thermoelectric power factor (3.97x10(-3) W m(-1) K-2) at 450 K. The enhancement of thermoelectric properties mainly originates from highly crystalline and oriented nanostructures embedded in the Bi2S3 films. (c) 2007 American Institute of Physics.

引用

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