Enhanced silicon oxide film growth on Si (100) using electron impact

被引：44

作者：

Xu, JZ ^{[1
]}

Choyke, WJ

Yates, JT

机构：

[1] Univ Pittsburgh, Dept Chem, Ctr Surface Sci, Pittsburgh, PA 15260 USA

[2] Univ Pittsburgh, Dept Phys, Pittsburgh, PA 15260 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.366516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of electron beam impact on the oxidation of Si (100) by oxygen has been studied using x-ray photoelectron spectroscopy and Auger electron spectroscopy. It was found that electron beam impact can enhance the oxidation of Si (100) by oxygen at low temperatures, resulting in silicon dioxide formation. Furthermore, electron energy-dependent film growth experiments were carried out on O-2(a) and an electron attachment resonance energy of similar to 10.1 eV was found. A possible electron-induced oxidation mechanism is proposed which involves dissociative electron attachment for adsorbed O-2 species and the formation of O and O- species from adsorbed O-2(-). (C) 1997 American Institute of Physics.

引用

页码：6289 / 6292

页数：4

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