Graphene strain tuning by control of the substrate surface chemistry

被引：10

作者：

Bruna, M. ^{[1
]}

Vaira, A. ^{[2
]}

Battiato, A. ^{[2
]}

Vittone, E. ^{[2
]}

Borini, S. ^{[1
,3
]}

机构：

[1] INRIM, Electromagnet Div, I-10135 Turin, Italy

[2] Univ Turin, Dept Expt Phys, Ctr Excellence NIS, I-10125 Turin, Italy

[3] INRIM, Thermodynam Div, I-10135 Turin, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

RAMAN-SPECTROSCOPY;

D O I：

10.1063/1.3463460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the Raman spectrum of graphene is sensitive to the surface chemistry of the substrate where the atomic plane is deposited. Two types of functionalized SiO2 surface are experimentally compared: OH-terminated and NH2-terminated. In the case of NH2-terminated surface, the graphene Raman bands are significantly redshifted with respect to the peaks observed on the hydroxylated surface. The observed phonon softening can be ascribed to a biaxial strain induced into graphene by its interaction with the substrate. Therefore, the control of the substrate surface chemistry may be envisaged as a route to graphene strain engineering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463460]

引用

页数：3

共 24 条

[21] Electric field effect in atomically thin carbon films [J].