Surface-Energy Engineering of Graphene

被引：429

作者：

Shin, Young Jun ^{[1
,2
]}

Wang, Yingying ^{[3
]}

Huang, Han ^{[4
]}

Kalon, Gopinadhan ^{[1
,2
]}

Wee, Andrew Thye Shen ^{[4
]}

Shen, Zexiang ^{[3
]}

Bhatia, Charanjit Singh ^{[1
,5
]}

Yang, Hyunsoo ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Elect Engn & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, NanoCore, Singapore 117576, Singapore

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[4] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[5] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

LANGMUIR | 2010年 / 26卷 / 06期

关键词：

EPITAXIAL GRAPHENE; BILAYER GRAPHENE; BERRYS PHASE; FILMS; SPECTROSCOPY; WETTABILITY; TRANSISTORS; CARBON; WATER;

D O I：

10.1021/la100231u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69 degrees on SiC substrates to 92 degrees on graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single-, bi-, and multilayer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and the correlation between the level of disorder and wettability is reported. By using a low-power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

引用

页码：3798 / 3802

页数：5

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