Assessment of carrier-multiplication efficiency in bulk PbSe and PbS

被引:228
作者
Pijpers, J. J. H. [1 ]
Ulbricht, R. [1 ]
Tielrooij, K. J. [1 ]
Osherov, A. [2 ,3 ]
Golan, Y. [2 ,3 ]
Delerue, C. [4 ]
Allan, G. [4 ]
Bonn, M. [1 ]
机构
[1] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands
[2] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
[3] Ben Gurion Univ Negev, Ilse Katz Inst Nanosci & Nanotechnol, IL-84105 Beer Sheva, Israel
[4] Inst Elect Microelect & Nanotechnol, Dept ISEN, UMR 8520, CNRS, F-59046 Lille, France
基金
以色列科学基金会;
关键词
MULTIPLE EXCITON GENERATION; IMPACT IONIZATION; COLLOIDAL PBSE; QUANTUM DOTS;
D O I
10.1038/NPHYS1393
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
One of the important factors limiting solar-cell efficiency is that incident photons generate one electron-hole pair, irrespective of the photon energy. Any excess photon energy is lost as heat. The possible generation of multiple charge carriers per photon (carrier multiplication) is therefore of great interest for future solar cells(1). Carrier multiplication is known to occur in bulk semiconductors, but has been thought to be enhanced significantly in nanocrystalline materials such as quantum dots, owing to their discrete energy levels and enhanced Coulomb interactions(1-3). Contrary to this expectation, we demonstrate here that, for a given photon energy, carrier multiplication occurs more efficiently in bulk PbS and PbSe than in quantum dots of the same materials. Measured carrier-multiplication efficiencies in bulk materials are reproduced quantitatively using tight-binding calculations, which indicate that the reduced carrier-multiplication efficiency in quantum dots can be ascribed to the reduced density of states in these structures.
引用
收藏
页码:811 / 814
页数:4
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