Reactivity of the H-Si (111) surface

被引:58
作者
Terry, J
Mo, R
Wigren, C
Cao, RY
Mount, G
Pianetta, P
Linford, MR
Chidsey, CED
机构
[1] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
基金
美国国家科学基金会; 瑞典研究理事会;
关键词
D O I
10.1016/S0168-583X(97)00467-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The H-Si (111) surface has been well characterized [Hricovini et al., Phys. Rev. Lett. 70 (1993) 1992], so the reactivity of this surface was studied. H-Si (111) surfaces exposed to Cl-2, Br-2, and 1-alkenes were studied with photoemission spectroscopy. These particular compounds were chosen because of their importance in semiconductor processing and surface functionalization. The observation of the growth of a Si 2p component at high binding energy, characteristic of halogen reactivity, confirmed that bromine and chlorine gases both reacted with the H-Si (111) surface. Reactions with 1-alkenes were confirmed by measuring both the Si 2p and the C 1s core level spectra. The C 2s-based molecular orbitals in the valence band revealed the identity of the alkyl monolayer on the Si (111) surface. Therefore, we found that the H-Si (111) surface, under certain conditions, was reactive. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:94 / 101
页数:8
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