Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

被引:59
作者
Anselm, KA [1 ]
Nie, H [1 ]
Hu, C [1 ]
Lenox, C [1 ]
Yuan, P [1 ]
Kinsey, G [1 ]
Campbell, JC [1 ]
Streetman, BG [1 ]
机构
[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
avalanche photodiodes; III-V compounds;
D O I
10.1109/3.661456
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Previously, it has been demonstrated that resonant-cavity-enhanced separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) can achieve high bandwidths and high gain-bandwidth products while maintaining good quantum efficiency, In this paper, we describe a GaAs-based resonant-cavity-enhanced SAM APD that utilizes a thin charge layer for improved control of the electric field profile, These devices have shown RC-limited bandwidths above 30 GHz at low gains and gain-bandwidth products as high as 290 GHz. In order to gain insight into the performance of these APD's, homojunction APD's with thin multiplication regions were studied, It was found that the gain and noise have a dependence on the width of the multiplication region that is not predicted by conventional models. Calculations using width-dependent ionization coefficients provide good fits to the measured results, These calculations indicate that the gain-bandwidth product depends strongly on the charge layer doping and on the multiplication layer thickness and, further, that even higher gain-bandwidth products can be achieved with optimized structures.
引用
收藏
页码:482 / 490
页数:9
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