Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers

A multiple internal reflection infrared monitoring system based on two-prism coupling geometry has been developed for the quantitative measurement of organic contamination on 200 or 300 mm silicon wafers. The method is rapid, simple, and can be carried out nondestructively. Varying the distance between the prisms couplers allows one to perform absolute infrared absorption measurements without the need of a reference wafer. On 300 mm silicon wafers CH2 and CH3 surface concentrations as low as 4x10(12) cm(-2) can be measured. (C) 2000 American Institute of Physics. [S0003-6951(00)03540-3].