Mechanism studies of Cu RIE for VLSI interconnections

被引：6

作者：

Markert, M ^{[1
]}

Bertz, A ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Chemnitz Zwickau Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期

关键词：

copper; RIE; dry etching; interconnects; metallization;

D O I：

10.1016/S0167-9317(97)00103-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reactive ion etching of copper in Cl-2 and Cl-2/CF4 based plasmas has been investigated. Mass spectrometry was used to study the volatile species formed in the discharge using different gas mixtures. The analysis indicates that copper forms different complex halogenides (CuxClyFz) with a higher volatility depending on the halogen composition. The results show that Cu etching using halogen mixtures is possible at substrate temperatures as low as 165 degrees C. Finally, reliable patterning of 0.5 mu m thick Cu films down to 0.2 mu m line width has been shown.

引用

页码：127 / 133

页数：7

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