InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond

被引：67

作者：

Huber, D ^{[1
]}

Bauknecht, R

Bergamaschi, C

Bitter, M

Huber, A

Morf, T

Neiger, A

Rohner, M

Schnyder, I

Schwarz, V

Jäckel, H

机构：

[1] Swiss Fed Inst Technol, Electrotech Lab, Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland

[2] Inst Quantum Elect Micro & Optoelect Lab, CH-8093 Zurich, Switzerland

[3] Fachgrp Angew Schaltungstech, CH-5210 Windisch, Switzerland

[4] Opto Speed SA, CH-6805 Mezzovico, Switzerland

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2000年 / 18卷 / 07期

关键词：

heterojunction bipolar transitor (HBT); InP; optoelectronic integrated circuit (OEIC); photoreceiver; processing; transimpedance amplifier;

D O I：

10.1109/50.850745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure, Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ohm/380 Ohm and optical/electrical bandwidths of 50 GHz/34 GHz, To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transitor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date, We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value.

引用

页码：992 / 1000

页数：9

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