Photoluminescence of doped and undoped laser crystallized polycrystalline silicon

被引：5

作者：

Brendel, K ^{[1
]}

Nickel, NH ^{[1
]}

Lips, K ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 09期

关键词：

polycrystalline silicon; photoluminescence;

D O I：

10.1016/S0038-1098(03)00279-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) measurements were performed on thin doped and undoped laser crystallized polycrystalline silicon films. The spectra reveal a single peak around 0.98 eV that is attributed to band-tail luminescence. P and B doping reduces the PL intensity while the defect density remains constant. The reduction of the PL intensity is accompanied by a shift of the PL band to higher energies with increasing doping concentration. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：499 / 502

页数：4

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