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Island formation and faceting in the SiGe/Si(001) system

被引：37
作者：
Rastelli, A
von Känel, H
机构：
[1] Univ Pavia, INFM, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[2] ETH, Festkorperphys Lab, CH-8093 Zurich, Switzerland
[3] Politecn Milan, LNESS, I-22100 Como, Italy
[4] Politecn Milan, INFM, Dipartimento Fis, I-22100 Como, Italy
来源：
SURFACE SCIENCE | 2003年 / 532卷
关键词：
scanning tunneling microscopy; epitaxy; surface structure; morphology; roughness; and topography; silicon; germanium;
D O I：
10.1016/S0039-6028(03)00480-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The formation and evolution of coherently strained three-dimensional islands during epitaxial growth of SiGe on Si(0 0 1) was investigated by scanning tunneling microscopy. Si1-xGex layers a few nanometers thick were grown by magnetron sputter epitaxy at a substrate temperature of about 600 degreesC in a composition range x between 0.3 and 1. Islands first appear as shallow unfaceted mounds on a rough wetting layer. Subsequently, small {10 5} facets are introduced close to the regions of steepest slope on each mound. The ( 10 5) facets then expand, leading the mounds to gradually transform into truncated pyramids and eventually into completely faceted pyramids or slightly elongated hut-clusters bounded by four { 10 5} facets. Trenches surround large pyramids. Islands at different stages of their evolution are observed to coexist and to ripen during growth or post-growth annealing at 600 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.
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页码：769 / 773
页数：5
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