Ambipolar light-emitting organic field-effect transistor

被引：286

作者：

Rost, C

Karg, S

Riess, W

Loi, MA

Murgia, M

Muccini, M

机构：

[1] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

[2] CNR, ISMN, I-40129 Bologna, Italy

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.1785290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of alpha-quinquethiophene (alpha-5T) as hole-transport material and N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain-source voltage V-DS and the gate voltage V-G. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors. (C) 2004 American Institute of Physics.

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页码：1613 / 1615

页数：3

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