Chemical insight into electron density and wave functions: software developments and applications to crystals, molecular complexes and materials science

被引:46
作者
Bertini, Luca
Cargnoni, Fausto
Gatti, Carlo
机构
[1] CNR, ISTM, Dip Chim Fis & Elettrochim, I-20133 Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Biotecnol & Biosci, I-20126 Milan, Italy
关键词
electron densities; quantum theory of atoms in molecules and crystals; hydrogen-bonded systems; semiconductor surfaces; thermoelectric materials; source function;
D O I
10.1007/s00214-006-0208-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper overviews the work made by our group during the past 10-15 years on crystalline systems, semiconductor surfaces, molecular complexes and on materials of interest for technological applications, such as the defective silicon or the novel generation thermoelectric materials. Our main aim of extracting chemical insight into the analysis of electron densities and computed wave functions is illustrated through a number of examples. The recently proposed Source Function analysis is reviewed and a few of its more interesting applications are summarized. Software package developments, motivated by the need of a direct comparison with experiment or by the help these packages can provide for interpreting complex experimental outcomes, are described and future directions outlined. A particular emphasis is given to the TOPOND and TOPXD programs, which enable one to analyze theoretical and experimental crystalline densities using the rigorous framework of the Quantum Theory of Atoms in Molecules, due to Bader.
引用
收藏
页码:847 / 884
页数:38
相关论文
共 158 条
[91]  
Keith T., 1993, THESIS MCMASTER U
[92]   First-principles study of Zn-Sb thermoelectrics [J].
Kim, SG ;
Mazin, II ;
Singh, DJ .
PHYSICAL REVIEW B, 1998, 57 (11) :6199-6203
[93]   CHARACTERIZATION OF C-H-O HYDROGEN-BONDS ON THE BASIS OF THE CHARGE-DENSITY [J].
KOCH, U ;
POPELIER, PLA .
JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (24) :9747-9754
[94]   Chemical applications of X-ray charge-density analysis [J].
Koritsanszky, TS ;
Coppens, P .
CHEMICAL REVIEWS, 2001, 101 (06) :1583-1627
[95]  
KORITSANZKY T, 2003, XD COMPUTER PROGRAM
[96]  
LASI D, 2006, EUR CHARG DENS M 4
[97]   Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: weakening of the dimer bond by the addition of hydrogen [J].
Lauridsen, EM ;
Baker, J ;
Nielsen, M ;
Feidenhans'l, R ;
Falkenberg, G ;
Bunk, I ;
Zeysing, JH ;
Johnson, RL .
SURFACE SCIENCE, 2000, 453 (1-3) :18-24
[98]   CALCULATION OF PHONON-PHONON INTERACTIONS AND 2-PHONON BOUND-STATES ON THE SI(111)-H SURFACE [J].
LI, XP ;
VANDERBILT, D .
PHYSICAL REVIEW LETTERS, 1992, 69 (17) :2543-2546
[99]   Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si [J].
Libertino, S ;
Benton, JL ;
Jacobson, DC ;
Eaglesham, DJ ;
Poate, JM ;
Coffa, S ;
Kringhoj, P ;
Fuochi, PG ;
Lavalle, M .
APPLIED PHYSICS LETTERS, 1997, 71 (03) :389-391
[100]   Topological analysis of multiple metal-metal bonds in dimers of the M2(formamidinate)4 type with M = Nb, Mo, Tc, Ru, Rh, and Pd [J].
Llusar, R ;
Beltrán, A ;
Andrés, J ;
Fuster, F ;
Silvi, B .
JOURNAL OF PHYSICAL CHEMISTRY A, 2001, 105 (41) :9460-9466